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cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 1/13 MTS2072G6 cystek product specification dual n-channel enhancement mode mosfet MTS2072G6 tr1(n-ch) tr2(n-ch) bv dss 60v 30v i d 0.53a(v gs =10v) 5.6a(v gs =10 v) 1.2(v gs =10v) 16.6m (v gs =10v) r dson ( typ .) 1.6(v gs =4.5v) 24.7m (v gs =4.5v) description the MTS2072G6 consists of two different n-channel enhancement-mode mosfets in a single tsop-6 package, providing the designer with the best combin ation of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the tsop-6 package is universally preferred for a ll commercial-industrial surface mount applications. features ? simple drive requirement ? low gate charge ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline MTS2072G6 tsop-6 s2 g2 d1 g gate s source d drain g1 d2 s1 pin 1
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 2/13 MTS2072G6 cystek product specification absolute maximum ratings (ta=25 c) limits parameter symbol n-channel n-channel unit drain-source breakdown voltage bv dss 60 30 v gate-source voltage v gs 20 20 v continuous drain current @t a =25 c, v gs =10v (note 1) i d 0.53 5.6 a continuous drain current @t a =70 c, v gs =10v (note 1) i d 0.42 4.5 a pulsed drain current (note 2) i dm 1 20 a pd 1.14 w total power dissipation (note 1) linear derating factor 0.01 w / c operating junction and storage temperature tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 110 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec; 180 c/w when mounted on minimum copper pad. 2. pulse width limited by maximum junction temperature. tr 1, n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v gs =0, i d =250 a v gs(th) 0.9 1.5 2.4 v v ds =v gs , i d =250 a i gss - - 10 v gs =20v, v ds =0 - - 1 v ds =60v, v gs =0 i dss - - 10 a v ds =48v, v gs =0, tj=70c - 1.2 2.5 i d =500ma, v gs =10v *r ds(on) - 1.6 3 i d =100ma, v gs =4.5v *g fs 100 215 - ms v ds =10v, i d =100ma dynamic ciss - 31 - coss - 6 - crss - 4.1 - pf v ds =10v, v gs =0, f=1mhz *t d(on) - 2.5 - *t r - 6.3 - *t d(off) - 6 - *t f - 4.4 - ns v ds =30v, i d =100ma, v gs =10v, r g =25 *qg - 0.9 - *qgs - 0.1 - *qgd - 0.3 - nc v ds =30v, i d =0.53a, v gs =10v source-drain diode *i s - - 0.53 *i sm - - 1 a *v sd - 0.8 1.2 v v gs =0v, i s =100ma *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 3/13 MTS2072G6 cystek product specification tr 2, n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =250 a v gs(th) 1 1.6 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0 - - 1 a v ds =24v, v gs =0 i dss - - 25 a v ds =24v, v gs =0, tj=70c - 16.6 25 i d =5a, v gs =10v *r ds(on) - 24.7 35 m i d =3a, v gs =4.5v *g fs - 6 - s v ds =5v, i d =4a dynamic ciss - 718 - coss - 78 - crss - 69 - pf v ds =15v, v gs =0, f=1mhz *t d(on) - 7.4 - *t r - 19 - *t d(off) - 35 - *t f - 13 - ns v ds =15v, i d =1a, v gs =10v, r g =6 *qg - 10 - *qgs - 2.5 - *qgd - 3.1 - nc v ds =15v, i d =5.6a, v gs =10v source-drain diode *i s - - 5 *i sm - - 20 a *v sd - 0.82 1.2 v v gs =0v, i s =5a *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTS2072G6-0-t1-g tsop-6 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 4/13 MTS2072G6 cystek product specification n-channel typical characteristics, tr 1 typical output characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0123456 v ds , drain-source voltage(v) i d , drain current(a) 3.5v v gs =2v 2.5v 4.5v 10v , 8v , 7v , 6v 3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =2.5v v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =500ma r ds( on) @tj=25c : 1.2 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() i d =500ma
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 5/13 MTS2072G6 cystek product specification n-channel typical charact eristics, tr 1(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a maximum drain current vs junctiontemperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =110c/w typical transfer characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v gate charge characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =30v i d =0.53a forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance-(s) v ds =10v pulsed ta=25c
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 6/13 MTS2072G6 cystek product specification n-channel typical charact eristics, tr 1(cont.) maximum safe operating area 0.01 0.1 1 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100m 1ms 100 s t a =25c, tj=150c v gs =10v, r ja =110c/w single pulse r ds( on) limit transient thermal response curves 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =180 c/w
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 7/13 MTS2072G6 cystek product specification n-channel typical characteristics, tr 2 typical output characteristics 0 5 10 15 20 012345 v ds , drain-source voltage(v) i d , drain current (a) 10v, 9v, 8v, 7v, 6v, 5v, 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current (a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =10v, i d =5a v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =5a r dson @tj=25c : 16.6m
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 8/13 MTS2072G6 cystek product specification n-channel typical charact eristics, tr 2(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs( th) ,normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance-(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 024681012 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =15v i d =5.6a typical transfer characteristics 0 4 8 12 16 20 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =110c/w
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 9/13 MTS2072G6 cystek product specification n-channel typical charact eristics, tr 2(cont.) maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100m 1ms 100 s t a =25c, tj=150c v gs =10v, r ja =110c/w single pulse transient thermal response curves 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =180 c/w
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 10/13 MTS2072G6 cystek product specification reel dimension
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 11/13 MTS2072G6 cystek product specification carrier tape dimension
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 12/13 MTS2072G6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c879g6 issued date : 2012.10.09 revised date : page no. : 13/13 MTS2072G6 cystek product specification tsop-6 dimension marking: 6-lead tsop-6 plastic surface mounted package cystek package code: g6 style: pin 1. gate1 (g1) pin 2. source1 (s1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) pin 6. drain1 ( d1 ) 2072 device name date code millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.700 0.900 0.028 0.035 e 1.600 1.700 0.063 0.067 a1 0.000 0.100 0.000 0.004 e1 2.650 2.950 0.104 0.116 a2 0.700 0.800 0.028 0.031 e 0.95 (bsc) 0.037 (bsc) b 0.350 0.500 0.014 0.020 e1 1.90 (bsc) 0.075 (bsc) c 0.080 0.200 0.003 0.008 l 0.300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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